Gallium nitride field-effect transistors (GaN FETs) use electric fields to modulate the current flowing through semiconductor channels. Electronics engineers frequently integrate 650-V components into electric-vehicle chargers, finding that they increase the available power density and support fast-charging applications. Numerous industry vendors have responded to the rising demand with innovative offerings.

Prioritizing innovation

Decision-makers at electronic component companies must monitor industry trends and respond by offering new solutions that address the emerging needs of engineering specialists and their clients. Many innovations include specific functionality for use in demanding applications.

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Advanced semiconductor component supplier Renesas Electronics Corp. recently unveiled three high-voltage 650-V GaN FETs for e-mobility charging, AI data centers, and power supply servers. They are available in several package options, giving product development designers increased flexibility to customize designs for specific architectures.

The products retain the operating simplicity of silicon FETs while minimizing power loss and achieving superior efficiency. These solutions are suited for projects with size-restricted form factors because their dies are 14% smaller than previously released devices in the product line. This advantage lowers output capacitance and maintains high performance.

Engineering teams can easily integrate the components into existing chargers because they use silicon FETs for the input stage and work with commercially available gate drivers. That compatibility supports designers interested in using GaN-based switching devices. Industrial power converters and renewable energy systems are among the many applications beyond EV chargers. Simple-to-implement designs like these support innovation by removing common adoption barriers and encouraging design teams to explore new possibilities.

Increasing availability

EV charging experts will embrace GaN FETs if there are second sources from reliable vendors. Nexperia, for example, has one of the widest selections of GaN FETs, and it recently highlighted that differentiator by launching 12 devices. These include 650-V offerings for AC/DC converters, making them suited for future EV charging applications.

Nexperia expanded its GaN FET portfolio due to a rising demand for components used in high-efficiency, compact systems. Besides the 650-V GaN FETs in its high-voltage family, 100-V and 150-V devices are available for light EVs and e-bikes.

Since introducing its first enhancement-mode GaN FETs in 2023, Nexperia has expanded its product offerings to tackle common design challenges. These include depletion-mode and cascode models for building into EV components and other popular commercial items, including mobile and consumer products.

Raising efficiency

Increasing EV adoption rates have raised people’s interest in easily accessible charging points. One study even found that 17% of EV owners would use them regardless of the cost. Faster battery charging and reliable performance raise satisfaction, which makes dependable EV chargers good revenue drivers for entities such as dealerships, hotels, and venues. Including GaN FETs in charger designs allows electronics designers to develop and market purposeful solutions that raise overall EV desirability.

Keeping the components cool facilitates safety and expected operations. A new 650-V GaN FET module from Infineon Technologies AG, for example, accommodates that temperature management need. It includes a high-performance substrate that lowers thermal resistance, making systems more efficient with fewer cooling requirements.

The single module design provides up to 70 kW per phase and maintains thermal cycling robustness in demanding use cases. This device targets high-power applications, including DC fast-charging EV charger stations, AI data centers, and renewable energy infrastructures.

Infineon uses a proprietary cold-welding method for solder-free joints that maintain electrical conductivity and mechanical stability in challenging environments. The compact design occupies up to 30% less space on printed-circuit-board layouts, aligning with engineers’ miniaturization goals. These user-friendly offerings are also easily integrated into designs, shortening time to market.

Enabling versatility

These recent GaN FET examples indicate healthy market demand. Electronics industry leaders should continue monitoring this trend to stay informed of new product releases, notable improvements, and emerging use cases.

These new product developments solve some of EV designers’ biggest design challenges around performance, efficiency, and packaging flexibility. Such advantages foster continued interest in GaN FETs in future product designs. Engineers can optimize results by studying datasheets, comparing similar devices, and reviewing performance data to select the most suitable components for their specific chargers.

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