IDEAL Semiconductor Devices Inc. has announced that its SuperQ-based 200-V iS20M028S1P 25-mΩ MOSFET, housed in a TO-220 package, is now in mass production. Four additional 200-V devices are also now sampling, including the company’s lowest-resistance devices in TOLL and D²PAK-7L packages with a maximum R_DS(on) of 5.5 mΩ.

This delivers 1.2× lower resistance than previously possible, and 1.7× lower than the company’s next-best competitor, according to iDEAL.

(Source: iDEAL Semiconductor Devices Inc.)

Based on iDEAL’s SuperQ technology that is reported to deliver breakthrough energy efficiency using conventional CMOS processes, the platform technology is purpose-built to mitigate power loss in applications such as motor drives, LED lighting, battery protection, AI servers, isolated DC/DC power modules, USB-PD adapters, and solar.

The SuperQ technology breaks through limits in switching and conduction and delivers a step-change in performance and efficiency, the company said, while preserving the core advantages of silicon: ruggedness, high-volume manufacturability, and reliability at 175°C.

The SuperQ technology increases the performance of all power semiconductor devices, and increases silicon utilization from 50% to 95%, the company said. Targeting high-frequency designs, the technology enables lower junction temperatures and smaller heat sinks.

The SuperQ silicon power devices are in production at Polar Semiconductor, a foundry specializing in high-voltage, power, and sensor technologies. IDEAL’s first products – the 150-V and 200-V MOSFETs – are in production at Polar’s high-volume 200-mm manufacturing facility in Minnesota with 300-V and 400-V devices to follow, the company said.

The post SuperQ 200-V MOSFET enters mass production appeared first on Electronic Products.