Diodes has expanded its series of automotive-compliant bipolar transistors with 12 NPN and PNP devices designed to achieve ultra-low VCE(sat). With a saturation voltage of just 17 mV at 1 A and on-resistance as low as 12 mΩ, the DXTN/P 78Q and 80Q series minimize conduction losses by up to 50% versus previous generations, enabling cooler operation and easier thermal management.
The transistors feature collector-emitter voltage ratings (BVCEO) of 30 V, 60 V, and 100 V, and can handle continuous currents up to 10 A (20 A peak), making them suitable for 12‑V, 24‑V, and 48‑V automotive systems. They can be used for gate driving MOSFETs and IGBTs, power line and load switching, low-dropout voltage regulation, DC/DC conversion, and driving motors, solenoids, relays, and actuators.
Rated for continuous operation up to +175°C and offering high ESD robustness (HBM 4 kV, CDM 1 kV), the devices ensure reliable performance in harsh automotive environments. Housed in a compact 3.3×3.3-mm PowerDI3333-8 package, they reduce PCB footprint by up to 75% versus SOT223, while a large underside heatsink delivers low thermal resistance of 4.2°C/W.
The DXTN/P 78Q series is priced from $0.19 to $0.21, while the DXTN/P 80Q series is priced from $0.20 to $0.22, both in 6000-piece quantities. Access product pages and datasheets here.
Diodes
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